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1.2V Drive Nch + Nch MOSFET
UM6K33N
Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(UMT6). 3) Ultra low voltage drive(1.2V drive).
(1)
Dimensions (Unit : mm)
UMT6
(SC-88)
(6)
(5)
(4)
(2)
(3)
Application Switching
Abbreviated symbol : K33
Packaging specifications Package Type Code Basic ordering unit (pieces) UM6K33N
Inner circuit
Taping TN 3000
(6) (5) 1 2 2 (4)

Absolute maximum ratings (Ta = 25C) Symbol Parameter
1 (1) (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Tr1 SOURCE (2) Tr1 GATE (3) Tr2 DRAIN (4) Tr2 SOURCE (5) Tr2 GATE (6) Tr1 DRAIN
Limits 50 8 200 800 125 800
Unit V V mA mA mA mA
Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg
*1
*1 *2
150 mW / TOTAL 120 mW / ELEMENT 150 C 55 to +150 C

Thermal resistance Parameter
Symbol Rth (ch-a)
*
Limits 833 1042
Unit C / W /TOTAL C / W /ELEMENT
Channel to ambient
* Each terminal mounted on a recommended land.
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1/5
2010.01 - Rev.A
UM6K33N
Electrical characteristics (Ta = 25C)
Data Sheet
Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage
Symbol IGSS IDSS VGS (th)
Min. 50 0.3 -
Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55
Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 -
Unit A V A V
Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V
Drain-source breakdown voltage V (BR)DSS
Static drain-source on-state resistance
* RDS (on)
-
ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
*Pulsed
l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf *
0.4 -
S pF pF pF ns ns ns ns
ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=4.5V RL=300 RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Forward voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=200mA, VGS=0V
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2/5
2010.01 - Rev.A
UM6K33N
Electrical characteristic curves
0.4
DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
Data Sheet
0.4
DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
1 Ta=25C Pulsed
VDS= 10V Pulsed
0.3
Ta=25C Pulsed VGS= 1.2V
0.3
0.1
0.2
VGS= 1.0V
0.2
VGS=1.2V VGS=1.0V
Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
0.01
0.1
VGS= 0.8V
0.1 VGS=0.8V 0
0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I )
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( II )
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
Ta= 25C Pulsed
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
100
100 VGS= 4.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C
100 VGS= 2.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C
10
VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
1
1
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I )
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II )
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III )
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
100
VGS= 1.8V Pulsed
100
100
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 1.5V Pulsed
10
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 1.2V Pulsed
10
1
1
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
0.1 0.01
0.1 DRAIN-CURRENT : ID[A]
1
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV )
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( V )
Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( VI )
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3/5
2010.01 - Rev.A
UM6K33N
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Data Sheet
STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[
1
1
10 9 8 7 6 5 4 3 2 1 0 0 5 10 ID= 20mA ID=200mA Ta=25C Pulsed
Ta= -25C Ta=25C Ta=75C Ta=125C
SOURCE CURRENT : Is [A]
VDS= 10V Pulsed
VGS=0V Pulsed
0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01
0.1 0.001
0.01
0.1
1
0
0.5
1
1.5
DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000
1000
SWITCHING TIME : t [ns]
CAPACITANCE : C [pF]
tf 100 td(off)
Ta=25C VDD=30V VGS=4.5V RG=10 Pulsed
100
Ta=25C f=1MHz VGS=0V
Ciss
10 Crss
10
tr
1
Coss
td(on) 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 0.1 0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.01 - Rev.A
UM6K33N
Measurement circuits
Data Sheet
Pulse width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A
Notice
Notes
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